Research Updates on GaN

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 Interested in #GaN optoelectronics — sharing a recent work published in Elsevier Physica B.


In this study, the authors looked at how 100 MeV Si ion irradiation affects MBE-grown GaN thin films, particularly focusing on the evolution of microstructural strain and the resulting changes in optoelectronic behaviour.

The experiments were carried out at the Inter-University Accelerator Centre (IUAC) and the results offer useful insights into how irradiation can be used to tune material properties.





You can read the paper here:
https://lnkd.in/dJ8xE35E



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