Posts

Showing posts from June, 2026

Reearch Infra in Local India

  In one of my previous research labs, we placed several orders with Indian vendors for specialized scientific systems. The delivery was promised within a few months. It has now been years, and some systems are still not fully functional, while others have not been delivered at all. The issue wasn’t just technical. It was poor project management, weak communication, unclear responsibility, and a lack of people who truly understood how critical timelines and reliability are in real research. This poor experience made me reflect on a bigger problem. India has the talent to be a global scientific powerhouse, yet when it comes to building the high-end instruments that modern science depends on, we still rely heavily on imports. The global scientific instruments market is $50–60B today, heading toward $80–100B by 2030. India alone is a $3–5B annual market. But for tools like #XRD , #EQE , #IQE , #SEM / #TEM , #Raman , #MBE , and many more advanced analytical systems, over 90% are...

News on Reliability analysis of energy devices

A recent  Article on "Progress and perspectives on accelerated degradation modeling of perovskite solar cells" was published in Renewable and Sustainable Energy Reviews! 🌞💡 The article underscores the importance of comprehensive accelerated degradation models to accurately predict Perovskite solar cell stability and degradation kinetics under real-world conditions. Additionally, it addresses the remaining challenges in modeling degradation and identifies the figures of merit that can be derived from device degradation data. The work aims to inspire researchers to pursue this exciting, unexplored field so that a universal degradation scheme for Perovskite solar cells can be formulated. Read the full article here in the link- https://doi.org/10.1016/j.rser.2025.116173

Research Updates on GaN

  Interested in #GaN optoelectronics — sharing a recent work published in Elsevier Physica B. In this study, the authors looked at how 100 MeV Si ion irradiation affects MBE-grown GaN thin films, particularly focusing on the evolution of microstructural strain and the resulting changes in optoelectronic behaviour. The experiments were carried out at the Inter-University Accelerator Centre (IUAC) and the results offer useful insights into how irradiation can be used to tune material properties. You can read the paper here: https://lnkd.in/dJ8xE35E